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Part Datasheet Search > IGBTs > IXYS Semiconductor > IXYN82N120C3 Datasheet PDF
IXYN82N120C3
$ 31.095
IXYN82N120C3 Datasheet PDF (7 Pages)
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IXYN82N120C3 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
4 Pin
Case/Package
SOT-227-4
Breakdown Voltage (Collector to Emitter)
1200 V
Input Capacitance (Cies)
4.1nF @25V
Input Power (Max)
500 W
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
600 W

IXYN82N120C3 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Size-Length
38.23 mm
Size-Width
25.07 mm
Size-Height
9.6 mm
Operating Temperature
-55℃ ~ 175℃ (TJ)

IXYN82N120C3 Documents

IXYS Semiconductor
7 Pages / 0.18 MByte
IXYS Semiconductor
6 Pages / 0.17 MByte

IXYN82N120 Documents

IXYS Semiconductor
IXYS SEMICONDUCTOR IXYN82N120C3H1 IGBT Array & Module Transistor, N Channel, 105A, 3.2V, 500W, 1.2kV, SOT-227B New
IXYS Semiconductor
IGBT 1200V 105A Chassis Mount High-Speed IGBT - SOT-227B
Littelfuse
Insulated Gate Bipolar Transistor,
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