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IXYP20N65C3D1M Datasheet PDF - IXYS Semiconductor

Manufacturer:

IXYS Semiconductor

Category:

IGBTs

Case Package:

TO-220-3

Description:

IGBT Transistors 650V/18A XPT IGBT C3 Copacked TO-220

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IXYP20N65C3D1M Datasheet PDF (6 Pages)

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IXYP20N65C3D1M Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Number of Pins

3 Pin

Case/Package

TO-220-3

Power Dissipation

50 W

Breakdown Voltage (Collector to Emitter)

650 V

Reverse recovery time

30 ns

Input Power (Max)

50 W

Operating Temperature (Max)

175 ℃

Operating Temperature (Min)

55 ℃

Power Dissipation (Max)

50000 mW

IXYP20N65C3D1M Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Tube

Operating Temperature

-55℃ ~ 175℃ (TJ)

IXYP20N65C3D1M Environmental

IXYP20N65C3D1M Function Overview

IXYP20N65C3D1M Documents

IXYP20N65C3D1M Other Datasheet PDF

IXYS Semiconductor

6 Pages / 0.18 MByte

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IXYP20N65C3D1 Datasheet PDF

IXYS Semiconductor

Trans IGBT Chip N-CH 650V 50A 200000mW 3Pin(3+Tab) TO-220AB

IXYP20N65C3D1M Datasheet PDF

IXYS Semiconductor

IGBT Transistors 650V/18A XPT IGBT C3 Copacked TO-220

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