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Part Datasheet Search > BJTs > Microsemi > JAN2N3019S Datasheet PDF
JAN2N3019S
$ 21.3
JAN2N3019S Datasheet PDF (6 Pages)
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JAN2N3019S Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-39
Power Dissipation
0.8 W
Breakdown Voltage (Collector to Emitter)
80 V
hFE Min
50 @500mA, 10V
Input Power (Max)
800 mW
Operating Temperature (Max)
200 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
800 mW

JAN2N3019S Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bag
Material
Silicon
Operating Temperature
-65℃ ~ 200℃ (TJ)

JAN2N3019S Documents

Microsemi
6 Pages / 0.25 MByte
Microsemi
8 Pages / 0.26 MByte

JAN2N3019 Documents

Microsemi
JAN Series 80V 1A 800mW Through Hole Low Power NPN Silicon Transistor - TO-5
ON Semiconductor
JAN Series 80V 1A Low Power NPN Through Hole Silicon Transistor - TO-5
National Semiconductor
TRANS NPN 80V 1A TO39
Microchip
TRANS NPN 80V 1A TO39
Semicoa Semiconductor
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, HERMETIC SEALED, METAL CAN-3
Motorola
1000mA, 80V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-5, TO-5, 3 PIN
Raytheon
Small Signal Bipolar Transistor, 1-Element, NPN, Silicon, TO-39,
API Technologies
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, TO-5, 3 PIN
Crystalonics
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-205AD, CASE 79-04, TO-39, 3 PIN
M/A-Com
Small Signal Bipolar Transistor, 1A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-39,
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