JANS2N2907AUA Datasheet PDF - Semicoa Semiconductor

●This PNP JANS2N2907AUA general purpose bipolar junction transistor from Semicoa Semiconductors is perfect for a circuit requiring high-current density and can operate in a high voltage range. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 500 mW. It has a maximum collector emitter voltage of 60 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C.