JANS2N6851 Datasheet PDF - International Rectifier

●200V, P-CHANNEL

●The HEXFETtechnology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance. The HEXFET transistors also feature all of the well established advantages of MOSFETs such as volt

●age control, very fast switching, ease of parelleling and temperature stability of the electrical parameters.

●Features:

●Repetitive Avalanche Ratings

●Dynamic dv/dt Rating

●Hermetically Sealed

●Simple Drive Requirements

●Ease of Paralleling