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JANTX2N6796U Datasheet PDF - Microsemi

Manufacturer:

Microsemi

Category:

MOSFETs

Case Package:

ULCC-18

Description:

Trans MOSFET N-CH 100V 8A 18Pin CLCC

Pictures:

3D Model

Symbol

Footprint

Pinout

Product Pictures

Documentation:

JANTX2N6796U Datasheet (6 Pages)

JANTX2N6796U Datasheet PDF (6 Pages)

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JANTX2N6796U Specifications

TYPE

DESCRIPTION

Mounting Style

Surface Mount

Number of Pins

18 Pin

Case/Package

ULCC-18

Power Dissipation

0.8 W

Drain to Source Voltage (Vds)

100 V

Rise Time

75 ns

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

800mW (Ta), 25W (Tc)

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JANTX2N6796U Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Operating Temperature

-55℃ ~ 150℃ (TJ)

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JANTX2N6796U Environmental

JANTX2N6796U Function Overview

JANTX2N6796U Documents

JANTX2N6796U Datasheet

Microsemi

6 Pages / 0.21 MByte

JANTX2N6796U Other Datasheet PDF

Microsemi

10 Pages / 1.01 MByte

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Infineon

Trans MOSFET N-CH 100V 8A 3Pin TO-39

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Fairchild

Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF,

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Semicoa Semiconductor

Power Field-Effect Transistor, 8A I(D), 100V, 0.195ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF, HERMETIC SEALED, TO-39, 3 PIN

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Intersil

8A, 100V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

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N-channel enhancement mode MOSFET power transistor

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IRF

POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18Ω, Id=8A)

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Power Field-Effect Transistor, 8A I(D), 100V, 0.18ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AF

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Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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