JANTXV2N2369A Datasheet PDF - Microsemi

●Microsemi brings you the solution to your high-voltage BJT needs with their NPN JANTXV2N2369A general purpose bipolar junction transistor. This bipolar junction transistor"s maximum emitter base voltage is 4.5 V. Its maximum power dissipation is 360 mW. This bipolar junction transistor has an operating temperature range of -65 °C to 200 °C. It has a maximum collector emitter voltage of 15 V and a maximum emitter base voltage of 4.5 V.