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K4R271669E-TCS8
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K4R271669E-TCS8 Datasheet PDF
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K4R271669E-TCS8 Specifications

TYPE
DESCRIPTION
Number of Pins
54 Pin
Case/Package
WBGA
Supply Voltage
2.5 V

K4R271669E-TCS8 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete

K4R271669 Documents

Samsung
IC DRAM CHIP DIRECT RDRAM 128Mbit 2.5V 54WBGA
Samsung
Rambus DRAM, 8MX16, 45ns, CMOS, PBGA62, CENTER BONDED, MICRO, CSP, BGA-62
Samsung
128Mbit RDRAM(F-die)
Samsung
256K x 16/18Bit x 32s banks Direct RDRAMTM
Samsung
Rambus DRAM, 8MX16, 40ns, CMOS, PBGA54, CENTER BONDED, MICRO, CSP, BGA-54
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