K4T1G164QF-BCE6 Datasheet PDF - Samsung

●The 1Gb DDR2 SDRAM is organized as a 32Mbit x 4 I/Os x 8banks, 16Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous device achieves high speed double-data-rate transfer rates of up to 800Mb/ sec/pin (DDR2-800) for general applications.

●The chip is designed to comply with the following key DDR2 SDRAM fea tures such as posted CAS with additive latency, write latency = read latency - 1, Off-Chip Driver(OCD) impedance adjustment and On Die Termination.