Web Analytics
Part Datasheet Search > BJTs > ON Semiconductor > KSC5603DTU Datasheet PDF
KSC5603DTU
$ 0.537
KSC5603DTU Datasheet PDF
AiEMA has not yet included the datasheet for KSC5603DTU
If necessary, please send a supplementary document request to the administrator

KSC5603DTU Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Case/Package
TO-220-3
Number of Positions
3 Position
Power Dissipation
100 W
Breakdown Voltage (Collector to Emitter)
800 V
hFE Min
20 @400mA, 3V
Input Power (Max)
100 W
DC Current Gain (hFE)
20
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
100000 mW

KSC5603DTU Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Operating Temperature
150℃ (TJ)

KSC5603DTU Documents

ON Semiconductor
8 Pages / 0.26 MByte
ON Semiconductor
1 Pages / 0.09 MByte
ON Semiconductor
1 Pages / 0.13 MByte

KSC5603 Documents

ON Semiconductor
Trans GP BJT NPN 800V 3A 100000mW 3Pin(3+Tab) TO-220 Tube
Fairchild
KSC5603D Series 800V 3A Through Hole NPN Silicon Transistor - TO-220-3
Fairchild
Trans GP BJT NPN 800V 3A 3Pin(3+Tab) TO-220 Bulk
Freescale
TRANS NPN 800V 3A TO-220
Fairchild
TO-220 NPN 800V 3A
Part Datasheet PDF Search
Loading...
72,405,303 Parts Datasheet PDF, Update more than 5,000 PDF files ervery day.

Relate Parts

BOM Matching Tool
Matching parts
Alternative parts
Warning risks
Computing costs
Upload BOM File
File format: *.xlsx, *.xls, *.csv
Online 3D Gerber Viewer
Modeling in 15s
Preview PCB
40 types of layers
Preflight Risk
Upload Gerber File
Support standard RS-274X file, accept zip rar or 7z