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Part Datasheet Search > BJTs > ON Semiconductor > KSD1616AGBU Datasheet PDF
KSD1616AGBU
$ 0.033

KSD1616AGBU Datasheet PDF - ON Semiconductor

Manufacturer:
ON Semiconductor
Category:
BJTs
Case Package:
TO-226-3
Description:
TRANSISTOR NPN 60V 1A TO-92
Pictures:
3D Model
Symbol
Footprint
Pinout
Product Pictures
Documentation:
KSD1616AGBU Datasheet (7 Pages)
Package Outline Dimension on5 Page6 Page
Part Numbering System on1 Page
KSD1616AGBU Datasheet PDF (7 Pages)
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KSD1616AGBU Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
160 MHz
Number of Pins
3 Pin
Case/Package
TO-226-3
Number of Positions
3 Position
Power Dissipation
750 mW
Breakdown Voltage (Collector to Emitter)
60 V
hFE Min
200 @100mA, 2V
Input Power (Max)
750 mW
DC Current Gain (hFE)
200
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
750 mW
View Datasheet >

KSD1616AGBU Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Bag
Material
Silicon
Operating Temperature
150℃ (TJ)
View Datasheet >

KSD1616AGBU Documents

KSD1616AGBU Datasheet
ON Semiconductor
7 Pages / 0.19 MByte
KSD1616AGBU Other Datasheet PDF
ON Semiconductor
9 Pages / 1.79 MByte

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