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Part Datasheet Search > BJTs > ON Semiconductor > KSD1616AYTA Datasheet PDF
KSD1616AYTA
$ 0.103

KSD1616AYTA Datasheet PDF - ON Semiconductor

Manufacturer:
ON Semiconductor
Category:
BJTs
Case Package:
TO-226-3
Description:
Trans GP BJT NPN 60V 1A 3Pin TO-92 Ammo
Pictures:
3D Model
Symbol
Footprint
Pinout
Product Pictures
Documentation:
KSD1616AYTA Datasheet (10 Pages)
Package Outline Dimension on1 Page
KSD1616AYTA Datasheet PDF (10 Pages)
View Datasheet
Click page to view the detail

KSD1616AYTA Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
160 MHz
Number of Pins
3 Pin
Case/Package
TO-226-3
Number of Positions
3 Position
Power Dissipation
750 mW
Breakdown Voltage (Collector to Emitter)
60 V
hFE Min
135 @100mA, 2V
Input Power (Max)
750 mW
DC Current Gain (hFE)
135
Fall Time
0.07 µs
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
750 mW
View Datasheet >

KSD1616AYTA Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Material
Silicon
Size-Length
5.2 mm
Size-Width
4.19 mm
Size-Height
5.33 mm
Operating Temperature
150℃ (TJ)
View Datasheet >

KSD1616AYTA Documents

KSD1616AYTA Datasheet
ON Semiconductor
10 Pages / 0.09 MByte
KSD1616AYTA Other Datasheet PDF
ON Semiconductor
9 Pages / 1.79 MByte
KSD1616AYTA Drawing Diagrams
ON Semiconductor
1 Pages / 0.01 MByte

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