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KSP10BU Datasheet PDF - Fairchild

Manufacturer:

Fairchild

Category:

BJTs

Case Package:

TO-226-3

Description:

KSP10 Series 25V 350mW Through Hole NPN Epitaxial Silicon Transistor - TO-92

Pictures:

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Product Pictures

Documentation:

KSP10BU Datasheet (5 Pages)

Package Outline Dimension on4 Page

KSP10BU Datasheet PDF (5 Pages)

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KSP10BU Specifications

TYPE

DESCRIPTION

Mounting Style

Through Hole

Frequency

650 MHz

Number of Pins

3 Pin

Voltage Rating (DC)

25.0 V

Current Rating

100 mA

Case/Package

TO-226-3

Number of Positions

3 Position

Polarity

NPN

Power Dissipation

1 W

Breakdown Voltage (Collector to Emitter)

25 V

hFE Min

60 @4mA, 10V

Input Power (Max)

350 mW

DC Current Gain (hFE)

Operating Temperature (Max)

150 ℃

Operating Temperature (Min)

-55 ℃

Power Dissipation (Max)

1 W

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KSP10BU Size & Package

TYPE

DESCRIPTION

Product Lifecycle Status

Active

Packaging

Bulk

Material

Silicon

Size-Length

4.58 mm

Size-Width

3.86 mm

Size-Height

4.58 mm

Operating Temperature

150℃ (TJ)

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KSP10BU Environmental

KSP10BU Export Classifications

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KSP10BU Datasheet

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