LC3564B Datasheet PDF - Sanyo Semiconductor

●Overview

●The LC3564B, LC3564BS, LC3564BM, and LC3564BT are 8192-word ×8-bit asynchronous silicon gate CMOS SRAMs. These are full CMOS type SRAMs that adopt a six-transistor memory cell and feature fast access times, low operating power dissipation, and an ultralow standby current.

●Features

●• Supply voltage range:  2.7 to 5.5 V

●— In 5-V operation mode: 5.0 V ±10%

●— In 3-V operation mode: 3.0 V ±10%

●• Address access time (tAA)

●— In 5-V operation mode:

●  LC3564B, BS, BM, and BT-70: 70 ns (max)

●  LC3564B, BS, BM, and BT-10: 100 ns (max)

●— In 3-V operation mode:

●  LC3564B, BS, BM, and BT-70: 200 ns (max)

●  LC3564B, BS, BM, and BT-10: 500 ns (max)

●• Ultralow standby current

●— In 5-V operation mode: 1.0 µA (Ta ≤70°C), 3.0 µA (Ta ≤85°C)

●— In 3-V operation mode: 0.8 µA (Ta ≤70°C), 2.5 µA (Ta ≤85°C)

●• Operating temperature range

●— In 5-V operation mode: –40 to 85°C

●— In 3-V operation mode: –40 to 85°C

●• Data retention supply voltage: 2.0 to 5.5 V

●• All input and output levels:

●— In 5-V operation mode: TTL compatible levels

●— In 3-V operation mode: VCC –0.2 V/0.2 V

●• Three control inputs: OE, CE1, and CE2

●• Shared input and output pins, three-state outputs

●• No clock required

●• Packages

●  28-pin DIP (600 mil) plastic package: LC3564B

●  28-pin DIP (300 mil) plastic package: LC3564BS

●  28-pin SOP (450 mil) plastic package: LC3564BM

●  28-pin TSOP (8 ×13.4 mm) plastic package: LC3564BT