LM329DZ/NOPB Datasheet PDF - TI

●The LM329DZ is a precision multi-current temperature-compensated 6.9V Zener Reference with dynamic impedance a factor of 10 to 100 less than discrete diodes. Constructed in a single silicon chip, the LM329 uses active circuitry to buffer the internal Zener allowing the device to operate over a 0.5 to 15mA range with virtually no change in performance. The LM329 is available with a temperature coefficient of 0.01%/°C. This reference also has excellent long term stability and low noise. A new subsurface breakdown Zener used in the LM329 gives lower noise and better long-term stability than conventional IC Zeners. Further the Zener and temperature compensating transistor are made by a planar process so they are immune to problems that plague ordinary Zeners. For example, there is virtually no voltage shift in Zener voltage due to temperature cycling and the device is insensitive to stress on the leads.

● 0.8R Dynamic impedance at any current

● 0.01%/°C 7µV Wideband noise

● 5% Initial tolerance

● 0.002% Long term stability

● Subsurface Zener

●This device has limited built-in ESD protection, leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.