LX5514LL-TR Datasheet PDF - Microsemi

●DESCRIPTION

●The LX5514 is a power amplifier optimized for WLAN applications in the 2.3 – 2.5GHz frequency range. The power amplifier is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and output pre-matching.

●The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). Power gain of 28dB is obtained with a low quiescent current of 80mA.

●KEY FEATURES

●▪ Advanced InGaP HBT

●▪ 2.3 – 2.5GHz Operation

●▪ Single-Polarity 3.3V Supply

●▪ Quiescent Current 80mA

●▪ Power Gain 28dB

●▪ Total Current 150mA for POUT=20dBm OFDM

●▪ EVM ~3 % 54Mbps / 64QAM

●▪ Small Footprint: 2 x 2mm

●▪ Low Profile: 0.46mm

●APPLICATIONS

●▪ IEEE 802.11b/g