M28W160ECT70N6U Datasheet PDF - ST Microelectronics

●SUMMARY DESCRIPTION

●The M28W160EC is a 16 Mbit (1 Mbit x 16) nonvolatile Flash memory that can be erased electrically at the block level and programmed in-system on a Word-by-Word basis. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. VDDQ allows to drive the I/O pin down to 1.65V. An optional 12V VPP power supply is provided to speed up customer programming.

●FEATURES SUMMARY

●■ SUPPLY VOLTAGE

●   – VDD = 2.7V to 3.6V Core Power Supply

●   – VDDQ= 1.65V to 3.6V for Input/Output

●   – VPP = 12V for fast Program (optional)

●■ ACCESS TIME: 70, 85, 90,100ns

●■ PROGRAMMING TIME:

●   – 10µs typical

●   – Double Word Programming Option

●■ COMMON FLASH INTERFACE

●   – 64 bit Security Code

●■ MEMORY BLOCKS

●   – Parameter Blocks (Top or Bottom location)

●   – Main Blocks

●■ BLOCK LOCKING

●   – All blocks locked at Power Up

●   – Any combination of blocks can be locked

●   – WP for Block Lock-Down

●■ SECURITY

●   – 64 bit user Programmable OTP cells

●   – 64 bit unique device identifier

●   – One Parameter Block Permanently Lockable

●■ AUTOMATIC STAND-BY MODE

●■ PROGRAM and ERASE SUSPEND

●■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

●■ ELECTRONIC SIGNATURE

●   – Manufacturer Code: 20h

●   – Top Device Code, M28W160ECT: 88CEh

●   – Bottom Device Code, M28W160ECB: 88CFh

●■ PACKAGES

●   – Compliant with Lead-Free Soldering Processes

●   – Lead-Free Versions