M29DW323DB70N6 Datasheet PDF - ST Microelectronics

●SUMMARY DESCRIPTION

●The M29DW323D is a 32 Mbit (4Mb x8 or 2Mb x16) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage (2.7 to 3.6V) supply. On power-up the memory defaults to its

●Read mode.

●FEATURES SUMMARY

●■ SUPPLY VOLTAGE

●–VCC = 2.7V to 3.6V for Program, Erase and Read

●–VPP=12V for Fast Program (optional)

●■ ACCESS TIME: 70ns

●■ PROGRAMMING TIME

●– 10µs per Byte/Word typical

●– Double Word/ Quadruple Byte Program

●■ MEMORY BLOCKS

●– Dual Bank Memory Array: 8Mbit+24Mbit

●– Parameter Blocks (Top or Bottom Location)

●■ DUAL OPERATIONS

●– Read in one bank while Program or Erase in other

●■ ERASE SUSPEND and RESUME MODES

●– Read and Program another Block during Erase Suspend

●■ UNLOCK BYPASS PROGRAM COMMAND

●– Faster Production/Batch Programming

●■ VPP/WPPIN for FAST PROGRAM and WRITE PROTECT

●■ TEMPORARY BLOCK UNPROTECTION MODE

●■ COMMON FLASH INTERFACE

●– 64 bit Security Code

●■ EXTENDED MEMORY BLOCK

●– Extra block used as security block or to store additional information

●■ LOW POWER CONSUMPTION

●– Standby and Automatic Standby

●■ 100,000 PROGRAM/ERASE CYCLES per BLOCK

●■ ELECTRONIC SIGNATURE

●– Manufacturer Code: 0020h

●– Top Device Code M29DW323DT: 225Eh

●– Bottom Device Code M29DW323DB: 225Fh