M29F010B70N6 Datasheet PDF - ST Microelectronics

●SUMMARY DESCRIPTION

●The M29F010B is a 1 Mbit (128Kb x8) non-volatile memory that can be read, erased and reprogrammed. These operations can be performed using a single 5V supply. On power-up the memory defaults to its Read mode where it can be read in the same way as a ROM or EPROM.

●■SINGLE 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS

●■ACCESS TIME: 45ns

●■PROGRAMMING TIME

●–8µs per Byte typical

●■8 UNIFORM 16 Kbytes MEMORY BLOCKS

●■PROGRAM/ERASE CONTROLLER

●– Embedded Byte Program algorithm

●– Embedded Multi-Block/Chip Erase algorithm

●– Status Register Polling and Toggle Bits

●■ERASE SUSPEND and RESUME MODES

●– Read and Program another Block during

●Erase Suspend

●■UNLOCK BYPASS PROGRAM COMMAND

●– Faster Production/Batch Programming

●■LOW POWER CONSUMPTION

●– Standby and Automatic Standby

●■100,000 PROGRAM/ERASE CYCLES per BLOCK

●■20 YEARS DATA RETENTION

●– Defectivity below 1 ppm/year

●■ELECTRONIC SIGNATURE

●– Manufacturer Code: 20h