M58BW016FB7T3F Datasheet PDF - Micron

●Description

●The M58BW016DT, M58BW016DB, M58BW016FT and M58BW016FB are 16-Mbit nonvolatile Flash memories that can be erased electrically at the block level and programmed in-system on a double-word basis using a 2.7 V to 3.6 V VDD supply for the circuit and a VDDQ supply down to 2.4 V for the input and output buffers. Optionally a 12 V VPP supply can be used to provide fast program and erase for a limited time and number of program/erase cycles.

●Features

●Supply voltage

●  –VDD= 2.7 V to 3.6 V for program, erase and read

●  –VDDQ= VDDQIN= 2.4 V to 3.6 V for I/O buffers

●  –VPP= 12 V for fast program (optional)

●High performance

●  – Access times: 70, 80 ns

●  – 56 MHz effective zero wait-state burst read

●  – Synchronous burst read

●  – Asynchronous page read

●Hardware block protection

●  –WPpin for write protect of the 2 outermost parameter blocks and all main blocks

●  –RPpin for write protect of all blocks

●Optimized for FDI drivers

●  – Fast program / erase suspend latency time < 6 µs

●  – Common Flash interface

●Memory blocks

●  – 8 parameters blocks (top or bottom)

●  – 31 main blocks

●Low power consumption

●  – 5 µA typical deep power-down

●  – 60 µA typical standby for M58BW016DT/B

●   150 µA typical standby for M58BW016FT/B

●  – Automatic standby after asynchronous read

●Electronic signature

●  – Manufacturer code: 20h

●  – Top device code: 8836h

●  – Bottom device code: 8835h

●100 K write/erase cycling + 20 years data retention (minimum)

●High reliability level with over 1 M write/erase cycling sustained