MA4E1317 Datasheet PDF - M/A-Com

●Description and Applications

●M/A-COM"s MA4E1317 single, MA4E1318 anti parallel pair, MA4E1319-1 reverse tee, MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flipchip Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection.

●The protective coatings prevent damage to the junction during automated or manual handling.

●The flip chip configuration is suitable for pick and place insertion. The high cutoff frequency

●of these diodes allowsuse through millimeter wave frequencies. Typical applications include

●single and double balanced mixers in PCN transceivers and radios, police radar detectors,

●and automotive radar detectors. The devices can be used through 80 GHz.

●Features

●•  Low Series Resistance

●•  Low Capacitance

●•  High Cutoff Frequency

●•  Silicon Nitride Passivation

●•  Polyimide Scratch Protection

●•  Designed for Easy Circuit Insertion