●■GENERAL DESCRIPTION
●The MBM29DL32XTD/BD are a 32M-bit, 3.0 V-only Flash memory organized as 4M bytes of 8 bits each or 2M
●words of 16 bits each. The MBM29DL32XTD/BD are offered in a 48-pin TSOP(I) and FBGA Package. These
●devices are designed to be programmed in-system with the standard system 3.0 V VCCsupply. 12.0 V VPPand
●5.0 V VCCare not required for write or erase operations. The devices can also be reprogrammed in standard
●EPROM programmers.
●■FEATURES
●• 0.33 µm Process Technology
●• Simultaneous Read/Write operations (dual bank)
● Multiple devices available with different bank sizes (Refer to Table 1)
● Host system can program or erase in one bank, then immediately and simultaneously read from the other bank
● Zero latency between read and write operations
● Read-while-erase
● Read-while-program
●• Single 3.0 V read, program, and erase
● Minimizes system level power requirements
●• Compatible with JEDEC-standard commands
● Uses same software commands as E2PROMs
●• Compatible with JEDEC-standard world-wide pinouts
● 48-pin TSOP(I) (Package suffix: PFTN – Normal Bend Type, PFTR – Reversed Bend Type)
● 57-ball FBGA (Package suffix: PBT)
●• Minimum 100,000 program/erase cycles
●• High performance
● 80 ns maximum access time
●• Sector erase architecture
● Eight 4K word and sixty-three 32K word sectors in word mode
● Eight 8K byte and sixty-three 64K byte sectors in byte mode
● Any combination of sectors can be concurrently erased. Also supports full chip erase.
●• Boot Code Sector Architecture
● T = Top sector
● B = Bottom sector
●• Hidden ROM (Hi-ROM) region
● 64K byte of Hi-ROM, accessible through a new “Hi-ROM Enable” command sequence
● Factory serialized and protected to provide a secure electronic serial number (ESN)
●•WP/ACC input pin
● At VIL, allows protection of boot sectors, regardless of sector protection/unprotection status
● At VIH, allows removal of boot sector protection
● At VACC, increases program performance
●• Embedded EraseTM Algorithms
● Automatically pre-programs and erases the chip or any sector
●• Embedded ProgramTM Algorithms
● Automatically writes and verifies data at specified address
●•DataPolling and Toggle Bit feature for detection of program or erase cycle completion
●• Ready/Busy output (RY/BY)
● Hardware method for detection of program or erase cycle completion
●• Automatic sleep mode
● When addresses remain stable, automatically switch themselves to low power mode.
●•Low VCCwrite inhibit ≤2.5 V
●• Erase Suspend/Resume
● Suspends the erase operation to allow a read data and/or program in another sector within the same device
●• Sector group protection
● Hardware method disables any combination of sector groups from program or erase operations
●• Sector Group Protection Set function by Extended sector group protection command
●• Fast Programming Function by Extended Command
●• Temporary sector group unprotection
● Temporary sector group unprotection via the RESETpin.
●• In accordance with CFI (Common Flash Memory Interface)
