MG300Q1US1 Datasheet PDF - Toshiba

Trans IGBT Module N-CH 1.2kV 300A 4Pin

NPN transistor for high power switching and notor control applications

N CHANNEL IGBT (HIGH POWER SWITCHING, MOTOR CONTROL APPLICATIONS)

V(ces): 1200V V(ges): 20V 2000W insulated gate bipolar transistor. For high power switching and motor control applica...

MG300Q1US2 power transistor module

MG300Q1US21 power transistor module

V(ces): 1200V V(ges): 20V 2000W insulated gate bipolar transistor. For high power switching and motor control applica...

NPN transistor for high power switching and notor control applications, 1200V, 300A

GTR Module: Silicon N-Channel IGBT