MHT1008NT1 Datasheet PDF - NXP

●Overview

●The MHT1008N 12.5 W CW high efficiency RF power transistor is designed for consumer and commercial cooking applications operating in the 2450 MHz ISM band.

●For additional information contact NXP® Semiconductor.

●MoreLess

●## Features

● Characterized with series equivalent large-signal impedance parameters and common source S-parameters

● Qualified for operation at 32 Vdc

● Integrated ESD protection

● 150°C case operating temperature

● 150°C die temperature capability

● RoHS Compliant

●Typical Applications

● Consumer cooking as PA driver

● Commercial cooking as PA driver

●## Features RF Performance Tables

●### Typical Performance

●VDD = 28 Vdc, IDQ = 110 mA

●Frequency

●(MHz)

● |

●Signal Type

● |

●Gps

●(dB)

● |

●PAE

●(%)

● |

●Pout

●(W)

●\---|---|---|---|---

●2400| CW| 18.5| 57.5| 12.5

●2450| 18.6| 56.3| 12.5

●2500| 18.3| 55.6| 12.5

●### Load Mismatch/Ruggedness

●Frequency

●(MHz)

● |

●Signal Type

● |

●VSWR

● |

●Pin

●(W)

● |

●Test

●Voltage

● |

●Result

●\---|---|---|---|---|---

●2450| CW| > 5:1

●at all Phase Angles| 26

●(3 dB Overdrive)| 32| No Device Degradation