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Part Datasheet Search > BJTs > ON Semiconductor > MJ15011G Datasheet PDF
MJ15011G
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MJ15011G Datasheet PDF (4 Pages)
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MJ15011G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
250 V
Current Rating
10.0 A
Case/Package
TO-204-2
Power Rating
200 W
Polarity
N-Channel, NPN
Power Dissipation
200 W
Breakdown Voltage (Collector to Base)
250 V
Breakdown Voltage (Collector to Emitter)
250 V
Continuous Collector Current
10A
hFE Min
20 @2A, 2V
Input Power (Max)
200 W
Operating Temperature (Max)
200 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
200000 mW

MJ15011G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tray
Material
Silicon
Size-Length
39.37 mm
Size-Width
26.67 mm
Size-Height
8.51 mm
Operating Temperature
-65℃ ~ 200℃ (TJ)

MJ15011G Documents

ON Semiconductor
4 Pages / 0.06 MByte
ON Semiconductor
17 Pages / 0.27 MByte

MJ15011 Documents

ON Semiconductor
TRANS NPN 250V 10A TO3
Motorola
10 AMPERE COMPLEMENTARY POWER TRANSISTORS 250 VOLTS 200W
GPS
TRANS NPN 250V 10A TO3
Inchange Semiconductor
Silicon NPN Power Transistor
Semelab
10A, 250V, NPN, Si, POWER TRANSISTOR, TO-204AA, HERMETIC SEALED, METAL, TO-3, 2 PIN
New Jersey Semiconductor
Trans GP BJT NPN 250V 10A 3Pin(2+Tab) TO-204 Tray
TT Electronics Resistors
Power Bipolar Transistor, 10A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-204AA, Metal, 2 Pin, HERMETIC SEALED, METAL, TO-3, 2 PIN
TT Electronics/BI
ON Semiconductor
TO-3 NPN 250V 10A
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