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Part Datasheet Search > BJTs > ON Semiconductor > MJ802G Datasheet PDF
MJ802G
$ 3.067
MJ802G Datasheet PDF (4 Pages)
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MJ802G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
2 MHz
Number of Pins
2 Pin
Voltage Rating (DC)
90.0 V
Current Rating
30.0 A
Case/Package
TO-204-2
Number of Positions
2 Position
Polarity
NPN
Power Dissipation
200 W
Breakdown Voltage (Collector to Emitter)
90 V
Thermal Resistance
0.875℃/W (RθJC)
Continuous Collector Current
30A
hFE Min
25
Input Power (Max)
200 W
DC Current Gain (hFE)
25
Operating Temperature (Max)
200 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
200000 mW

MJ802G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tray
Material
Silicon
Size-Length
39.37 mm
Size-Width
26.67 mm
Size-Height
8.51 mm
Operating Temperature
-65℃ ~ 200℃

MJ802G Documents

ON Semiconductor
4 Pages / 0.06 MByte
ON Semiconductor
187 Pages / 1.4 MByte

MJ802 Documents

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