MJB44H11T4 Datasheet PDF - ST Microelectronics

●Jump-start your electronic circuit design with this versatile NPN MJB44H11T4 GP BJT from STMicroelectronics. This bipolar junction transistor"s maximum emitter base voltage is 5 V. Its maximum power dissipation is 50000 mW. This component will be shipped in tape and reel packaging for effective mounting and safe delivery. It has a maximum collector emitter voltage of 80 V and a maximum emitter base voltage of 5 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.