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Part Datasheet Search > BJTs > ON Semiconductor > MJD122T4 Datasheet PDF
MJD122T4
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MJD122T4 Datasheet PDF (8 Pages)
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MJD122T4 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
100 V
Current Rating
8.00 A
Case/Package
TO-252-3
Power Dissipation
20 W
Breakdown Voltage (Collector to Emitter)
100 V
hFE Min
1000 @4A, 4V
Input Power (Max)
1.75 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Gain Bandwidth
4MHz (Min)
Power Dissipation (Max)
1750 mW

MJD122T4 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Cut Tape (CT)
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.38 mm
Operating Temperature
-65℃ ~ 150℃ (TJ)

MJD122T4 Documents

ON Semiconductor
8 Pages / 0.13 MByte
ON Semiconductor
11 Pages / 0.21 MByte
ON Semiconductor
2 Pages / 0.08 MByte
ON Semiconductor
13 Pages / 0.34 MByte

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SILICON POWER TRANSISTORS 8 AMPERES 100 VOLTS 20W
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