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Part Datasheet Search > BJTs > ON Semiconductor > MJD3055G Datasheet PDF
MJD3055G
$ 0.66

MJD3055G Datasheet PDF - ON Semiconductor

Manufacturer:
ON Semiconductor
Category:
BJTs
Case Package:
TO-252-3
Description:
DPAK NPN 60V 10A
Pictures:
3D Model
Symbol
Footprint
Pinout
Product Pictures
Documentation:
MJD3055G Datasheet (6 Pages)
Package Outline Dimension on5 Page6 Page
Package Footprint Pad Layout on5 Page
Part Numbering System on1 Page2 Page6 Page
MJD3055G Application Note (7 Pages)
MJD3055G Datasheet PDF (6 Pages)
View Datasheet
Click page to view the detail

MJD3055G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
2 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
60.0 V
Current Rating
10.0 A
Case/Package
TO-252-3
Polarity
NPN
Power Dissipation
1.75 W
Breakdown Voltage (Collector to Emitter)
60 V
Thermal Resistance
6.25℃/W (RθJC)
Continuous Collector Current
10A
hFE Min
20 @4A, 4V
Input Power (Max)
1.75 W
DC Current Gain (hFE)
10
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
20 W
View Datasheet >

MJD3055G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tube
Material
Silicon
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.38 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
View Datasheet >

MJD3055G Documents

MJD3055G Datasheet
ON Semiconductor
6 Pages / 0.07 MByte
MJD3055G Other Datasheet PDF
ON Semiconductor
5 Pages / 0.04 MByte
MJD3055G Application Note
ON Semiconductor
7 Pages / 0.12 MByte
MJD3055G Notice File
ON Semiconductor
56 Pages / 0.1 MByte

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