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MJD42CT4G
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MJD42CT4G Datasheet PDF (6 Pages)
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MJD42CT4G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Frequency
3 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
-100 V
Current Rating
-6.00 A
Case/Package
TO-252-3
Number of Positions
3 Position
Polarity
PNP, P-Channel
Power Dissipation
20 W
Breakdown Voltage (Collector to Emitter)
100 V
Continuous Collector Current
6A
hFE Min
15 @3A, 4V
Input Power (Max)
1.75 W
DC Current Gain (hFE)
30
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
20 W

MJD42CT4G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.38 mm
Operating Temperature
-65℃ ~ 150℃

MJD42CT4G Documents

ON Semiconductor
6 Pages / 0.13 MByte
ON Semiconductor
9 Pages / 0.17 MByte
ON Semiconductor
7 Pages / 0.12 MByte
ON Semiconductor
5 Pages / 0.04 MByte
ON Semiconductor
1 Pages / 0.14 MByte

MJD42CT4 Documents

ON Semiconductor
DPAK PNP 100V 6A
Motorola
Power Bipolar Transistor, 6A I(C), 100V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 2 Pin
Jiangsu Changjiang Electronics Technology
Transistor
ON Semiconductor
DPAK PNP 100V 6A
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