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Part Datasheet Search > BJTs > ON Semiconductor > MJE182STU Datasheet PDF
MJE182STU
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MJE182STU Datasheet PDF (4 Pages)
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MJE182STU Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
50 MHz
Number of Pins
3 Pin
Case/Package
TO-126-3
Power Dissipation
1.5 W
Breakdown Voltage (Collector to Emitter)
80 V
hFE Min
50 @100mA, 1V
Input Power (Max)
1.5 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
1500 mW

MJE182STU Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tube
Material
Silicon
Size-Length
8 mm
Size-Width
3.25 mm
Size-Height
11 mm
Operating Temperature
-65℃ ~ 150℃

MJE182STU Documents

ON Semiconductor
4 Pages / 0.04 MByte
ON Semiconductor
6 Pages / 0.14 MByte
ON Semiconductor
6 Pages / 0.11 MByte

MJE182 Documents

ST Microelectronics
Trans GP BJT NPN 80V 3A 12500mW 3Pin(3+Tab) SOT-32 Tube
ON Semiconductor
TO-225-3 NPN 40V 3A
Fairchild
Trans GP BJT NPN 80V 3A 3Pin TO-126
Central Semiconductor
Trans GP BJT NPN 80V 3A 3Pin TO-126 Box
NTE Electronics
t-Npn Si- Af Po
Motorola
3 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON 60-80 VOLTS 12.5W
Continental Device
12.5W Medium Power NPN Plastic Leaded Transistor. 80V Vceo, 3A Ic, 50 - 250 hFE.
Micro Commercial Components
Power Bipolar Transistor, 3A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
Mospec
POWER TRANSISTORS(3A,40-80V,12.5W)
Semelab
3A, 80V, NPN, Si, POWER TRANSISTOR, TO-126, TO-126, 3 PIN
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