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Part Datasheet Search > RF diodes > ON Semiconductor > MMBD352WT1G Datasheet PDF
MMBD352WT1G
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MMBD352WT1G Datasheet PDF - ON Semiconductor

Manufacturer:
ON Semiconductor
Category:
RF diodes
Case Package:
SC-70-3
Description:
ON SEMICONDUCTOR MMBD352WT1G RF Schottky Diode, Barrier, Single Pair Series, 7V, 10mA, 600mV, 0.9pF, SOT-323
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Documentation:
MMBD352WT1G Datasheet (3 Pages)MMBD352WT1G Application Note (3 Pages)
MMBD352WT1G Datasheet PDF (3 Pages)
View Datasheet
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MMBD352WT1G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
7.00 V
Current Rating
80.0 mA
Capacitance
0.9 pF
Case/Package
SC-70-3
Halogen Free Status
Halogen Free
Forward Voltage
0.6 V
Power Dissipation
300 mW
Forward Current
0.01 A
Maximum Forward Voltage (Max)
600 mV
Forward Current (Max)
10 mA
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
200 mW
View Datasheet >

MMBD352WT1G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
2.1 mm
Size-Width
1.24 mm
Size-Height
0.85 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)
View Datasheet >

MMBD352WT1G Documents

MMBD352WT1G Datasheet
ON Semiconductor
3 Pages / 0.08 MByte
MMBD352WT1G Other Datasheet PDF
ON Semiconductor
15 Pages / 0.09 MByte
MMBD352WT1G Drawing Diagrams
ON Semiconductor
2 Pages / 0.05 MByte
MMBD352WT1G Application Note
ON Semiconductor
3 Pages / 0.11 MByte

MMBD352WT1 Documents

MMBD352WT1 Datasheet PDF
ON Semiconductor
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MMBD352WT1 Datasheet PDF
Leshan Radio
Dual Schottky Barrier Diode
MMBD352WT1 Datasheet PDF
Motorola
SILICON, UHF BAND, MIXER DIODE, CASE 419-02, SC-70, 3Pin
MMBD352WT1 Datasheet PDF
Won-Top Electronics
Rectifier Diode, Schottky, 2 Element, 7V V(RRM), Silicon, PLASTIC PACKAGE-3
MMBD352WT1G Datasheet PDF
ON Semiconductor
ON SEMICONDUCTOR MMBD352WT1G RF Schottky Diode, Barrier, Single Pair Series, 7V, 10mA, 600mV, 0.9pF, SOT-323
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