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MMBT5089LT1
$ 1
MMBT5089LT1 Datasheet PDF (5 Pages)
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MMBT5089LT1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Voltage Rating (DC)
25.0 V
Current Rating
50.0 mA
Case/Package
SOT-23-3
Polarity
NPN
Power Dissipation
225 mW
Gain Bandwidth Product
50 MHz
Breakdown Voltage (Collector to Emitter)
25 V
Continuous Collector Current
0.05A
hFE Min
400 @100µA, 5V
Input Power (Max)
300 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
55 ℃

MMBT5089LT1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Reel (TR)
Size-Length
2.9 mm
Size-Width
1.3 mm
Size-Height
0.94 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

MMBT5089LT1 Documents

ON Semiconductor
5 Pages / 0.07 MByte
ON Semiconductor
19 Pages / 0.26 MByte
ON Semiconductor
8 Pages / 0.08 MByte

MMBT5089 Documents

Fairchild
Trans GP BJT NPN 25V 0.1A 3Pin SOT-23 T/R
ON Semiconductor
TRANS NPN 25V 0.1A SOT-23
Motorola
NPN silicon low noise transistor.
LiteOn
Small Signal Bipolar Transistor, 0.1A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, PLASTIC, SOT-23, 3 PIN
Leshan Radio
Small Signal Bipolar Transistor, 0.05A I(C), NPN
UTC
SOT-23 NPN 25V 0.1A
Freescale
TRANSISTOR,BJT,NPN,25V V(BR)CEO,50MA I(C),SOT-23
National Semiconductor
TI
Smt Sot-23 t/r
Diodes
Transistor
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