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Part Datasheet Search > BJTs > ON Semiconductor > MMBT5550LT3G Datasheet PDF
MMBT5550LT3G
$ 0.041
MMBT5550LT3G Datasheet PDF (6 Pages)
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MMBT5550LT3G Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
140 V
Current Rating
600 mA
Case/Package
SOT-23-3
Polarity
NPN
Power Dissipation
225 mW
Breakdown Voltage (Collector to Emitter)
140 V
hFE Min
60 @10mA, 5V
Input Power (Max)
225 mW
DC Current Gain (hFE)
60
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300 mW

MMBT5550LT3G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Material
Silicon
Size-Length
2.9 mm
Size-Width
1.3 mm
Size-Height
0.94 mm
Operating Temperature
-55℃ ~ 150℃ (TJ)

MMBT5550LT3G Documents

ON Semiconductor
6 Pages / 0.17 MByte
ON Semiconductor
7 Pages / 0.19 MByte
ON Semiconductor
6 Pages / 0.17 MByte
ON Semiconductor
6 Pages / 0.17 MByte

MMBT5550LT3 Documents

ON Semiconductor
600mA, 140V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, CASE 318-08, 3 PIN
Motorola
600mA, 140V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
ON Semiconductor
Trans GP BJT NPN 140V 0.06A 3Pin SOT-23 T/R
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