MMBT5551M3T5G Datasheet PDF - ON Semiconductor

●Design various electronic circuits with this versatile NPN MMBT5551M3T5G GP BJT from ON Semiconductor. This bipolar junction transistor"s maximum emitter base voltage is 6 V. Its maximum power dissipation is 640 mW. This component will be shipped in tape and reel packaging to allow for effective mounting and safe delivery. It has a maximum collector emitter voltage of 160 V and a maximum emitter base voltage of 6 V. This bipolar junction transistor has an operating temperature range of -55 °C to 150 °C.