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Part Datasheet Search > BJTs > ON Semiconductor > MMBTA55LT1 Datasheet PDF
MMBTA55LT1
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MMBTA55LT1 Datasheet PDF (5 Pages)
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MMBTA55LT1 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
-60.0 V
Current Rating
-500 mA
Case/Package
SOT-23-3
Polarity
PNP
Breakdown Voltage (Collector to Emitter)
60 V
Continuous Collector Current
0.5A
hFE Min
100 @100mA, 1V
Input Power (Max)
225 mW
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
300 mW

MMBTA55LT1 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Reel (TR)
Material
Silicon
Operating Temperature
-55℃ ~ 150℃ (TJ)

MMBTA55LT1 Documents

ON Semiconductor
5 Pages / 0.1 MByte
ON Semiconductor
26 Pages / 0.08 MByte
ON Semiconductor
5 Pages / 0.14 MByte

MMBTA55 Documents

Fairchild
Trans GP BJT PNP 60V 0.5A 3Pin SOT-23 T/R
CJ
SOT-23 PNP 60V 500mA
ON Semiconductor
Trans GP BJT PNP 60V 0.5A 3Pin SOT-23 T/R
KEC(Korea Electronics)
EPITAXIAL PLANAR PNP TRANSISTOR
Samsung
PNP EPITAXIAL SILICON TRANSISTOR
Taitron
SMD General Purpose Transistor (PNP)
Panjit
SOT-23 PNP -60V -0.5A
Diodes
General Purpose Applications, 60V, 500mA, 225mW, B= 50, >50mH z
Micro Commercial Components
SOT-23 Plastic-Encapsulate Biploar Transistors
Diotec Semiconductor
General Purpose Si-Epitaxial Planar Transistors
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