MOC8204SR2M Datasheet PDF - ON Semiconductor

●The 4N38M, H11D1M, H11D3M, and MOC8204M are phototransistor-type optically coupled optoisolators. A gallium arsenide infrared emitting diode is coupled with a high voltage NPN silicon phototransistor. The device is supplied in a standard plastic six-pin dual-in-line package.

●Features

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● High Voltage:

● MOC8204M, BVCEO= 400 V

● H11D1M, BVCEO= 300 V

● H11D3M, BVCEO= 200 V

● Safety and Regulatory Approvals:

● UL1577, 4,170 VACRMS for 1 Minute

● DIN-EN/IEC60747-5-5, 850 V Peak Working Insulation Voltage