MOCD223R2VM Datasheet PDF - ON Semiconductor

●The MOCD223M consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic siliconphotodarlington detector, in a surface mountable, small outline, plastic package. The MOCD223M is a dual-channel version of the MOC223M. They are ideallysuited for high density applications, and eliminates the need for through the board mounting.

●Features

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● High Current Transfer Ratio of 500% Minimum at IF= 1 mA

● Minimum BVCEO of 30 V Guaranteed

● Convenient Plastic SOIC-8 Surface Mountable Package Style, with 0.050" Lead Spacing

● Safety and Regulatory Approvals:

● UL1577, 2,500 VACRMS for 1 Minute

● DIN-EN/IEC60747-5-5, 565 V Peak Working Insulation Voltage