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MPSA56RLRMG
$ 0.056
MPSA56RLRMG Datasheet PDF (7 Pages)
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MPSA56RLRMG Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Frequency
50 MHz
Number of Pins
3 Pin
Voltage Rating (DC)
-80.0 V
Current Rating
-500 mA
Case/Package
TO-92-3
Number of Positions
3 Position
Polarity
PNP, P-Channel
Power Dissipation
625 mW
Breakdown Voltage (Collector to Emitter)
80 V
Continuous Collector Current
0.5A
hFE Min
100 @100mA, 1V
Input Power (Max)
625 mW
DC Current Gain (hFE)
100
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
625 mW

MPSA56RLRMG Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape
Operating Temperature
-55℃ ~ 150℃ (TJ)

MPSA56RLRMG Documents

ON Semiconductor
7 Pages / 0.08 MByte
ON Semiconductor
9 Pages / 0.19 MByte
ON Semiconductor
1 Pages / 0.07 MByte

MPSA56 Documents

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NTE ELECTRONICS MPSA56 Bipolar (BJT) Single Transistor, PNP, -80V, 50MHz, 625mW, -500mA, 100 hFE
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UTC
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