MRF1517NT1 Datasheet PDF - Freescale

●RF Power Field Effect Transistor

●N-Channel Enhancement-Mode Lateral MOSFET

●Designed for broadband commercial and industrial applications at frequen cies to 520 MHz. The high gain and broadband performance of this device makes it ideal for large-signal, common source amplifier applications in 7.5 volt portable FM equipment.

●• Specified Performance @ 520 MHz, 7.5 Volts

●  Output Power - 8 Watts

●  Power Gain - 14 dB

●  Efficiency - 70%

●• Capable of Handling 20:1 VSWR, @ 9.5 Vdc, 520 MHz, 2 dB Overdrive

●Features

●• Characterized with Series Equivalent Large-Signal Impedance Parameters

●• Excellent Thermal Stability

●• N Suffix Indicates Lead-Free Terminations. RoHS Compliant.

●• In Tape and Reel. T1 Suffix = 1,000 Units per 12 mm, 7 inch Reel.