MRF21010LR1 Datasheet PDF - Freescale

●The RF MOSFET Line

●RF Power Field Effect Transistors

●N-Channel Enhancement-Mode Lateral MOSFETs

●Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for FM, TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN-PCS/cellular radio and WLL applications.

●• Typical W-CDMA Performance: -45 dBc ACPR, 2140 MHz, 28 Volts,

●   5 MHz Offset/4.096 MHz BW, 15 DTCH

●   Output Power — 2.1 Watts

●   Power Gain — 13.5 dB

●   Efficiency — 21%

●• High Gain, High Efficiency and High Linearity

●• Integrated ESD Protection

●• Designed for Maximum Gain and Insertion Phase Flatness

●• Capable of Handling 10:1 VSWR @ 28 Vdc, 2170 MHz, 10 Watts CW Output Power

●• Excellent Thermal Stability

●• Characterized with Series Equivalent Large-Signal Impedance Parameters

●• In Tape and Reel. R1 Suffix = 500 Units per 32 mm, 13 Inch Reel.

●• Low Gold Plating Thickness on Leads. L Suffix Indicates 40µ″ Nominal.