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MRF586G
$ 10.11
MRF586G Datasheet PDF (4 Pages)
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MRF586G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Case/Package
TO-205
Breakdown Voltage (Collector to Emitter)
17 V
Gain
13.5 dB
hFE Min
40 @50mA, 5V
Input Power (Max)
1 W

MRF586G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Obsolete
Packaging
Bulk

MRF586G Documents

Microsemi
4 Pages / 0.29 MByte

MRF586 Documents

Microsemi
NPN 1W 17V 1GHz Through Hole RF Microwave Discrete Transistor - TO-39
Advanced Semiconductor
RF Small Signal Bipolar Transistor, 0.2A I(C), 1Element, Ultra High Frequency Band, Silicon, NPN, TO-39, TO-39, 3Pin
Microsemi
TRANS BIPO NPN TO-39
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