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Part Datasheet Search > Microchip > MSMLJ10CAE3/TR Datasheet PDF
MSMLJ10CAE3/TR
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MSMLJ10CAE3/TR Datasheet PDF (8 Pages)
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MSMLJ10CAE3/TR Documents

Microchip
8 Pages / 0.47 MByte

MSMLJ10CAE3 Documents

Microsemi
DO-214AB 10V 3000W
Microchip
TVS DIODE 10V 17V DO214AB
Microsemi
DO-214AB 10V 3000W
Microsemi
Sleep easy, never worry about surges again with this MSMLJ10CAE3TR TVS diode from Microsemi. Its test current is 1 mA. This device&s;s maximum clamping voltage is 17 V and minimum breakdown voltage is 11.1 V. Its peak pulse power dissipation is 3000 W. Its maximum leakage current is 5 μA. This TVS diode has an operating temperature range of -65 °C to 150 °C. In order to guarantee safe delivery and allow for quick mounting of this component after delivery, it will be enclosed in tape and reel packaging during shipment.
Microchip
TVS Diode Single Bi-Dir 10V 3KW 2-Pin SMC T/R
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