MT41J256M8HX-15E:D Datasheet PDF - Micron

●DDR3 SDRAM

●2Gb: x4, x8, x16 DDR3 SDRAM

●Features

●• VDD= VDDQ= 1.5V ±0.075V

●• 1.5V center-terminated push/pull I/O

●• Differential bidirectional data strobe

●• 8n-bit prefetch architecture

●• Differential clock inputs (CK, CK#)

●• 8 internal banks

●• Nominal and dynamic on-die termination (ODT) for data, strobe, and mask signals

●• Programmable CAS READ latency (CL)

●• Posted CAS additive latency (AL)

●• Programmable CAS WRITE latency (CWL) based on tCK

●• Fixed burst length (BL) of 8 and burst chop (BC) of 4 (via the mode register set [MRS])

●• Selectable BC4 or BL8 on-the-fly (OTF)

●• Self refresh mode

●• TC of 0°C to 95°C

●  – 64ms, 8192 cycle refresh at 0°C to 85°C

●  – 32ms, 8192 cycle refresh at 85°C to 95°C

●• Self refresh temperature (SRT)

●• Write leveling

●• Multipurpose register

●• Output driver calibration