MTB50P03HDL Datasheet PDF - Motorola

●HDTMOS E-FET™ High Energy Power FET D2PAK for Surface Mount

●P-channel Enhancement-Mode Silicon Gate

●The D2PAK package has the capability of housing a larger die than any existing surface mount package which allows it to be used in applications that require the use of surface mount components with higher power and lower RDS(on)capabilities. This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes.

●• Avalanche Energy Specified

●• Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode

●• Diode is Characterized for Use in Bridge Circuits

●• IDSSand VDS(on)Specified at Elevated Temperature

●• Short Heatsink Tab Manufactured — Not Sheared

●• Specially Designed Leadframe for Maximum Power Dissipation

●• Available in 24 mm 13–inch/800 Unit Tape & Reel, Add T4 Suffix to Part Number