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Part Datasheet Search > MOSFETs > Fairchild > MTD3055V Datasheet PDF
MTD3055V
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MTD3055V Datasheet PDF (4 Pages)
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MTD3055V Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Number of Pins
3 Pin
Voltage Rating (DC)
60.0 V
Current Rating
12.0 A
Case/Package
TO-252-3
Number of Positions
3 Position
Drain to Source Resistance (on) (Rds)
0.15 Ω
Polarity
N-Channel
Power Dissipation
48 W
Threshold Voltage
2.8 V
Drain to Source Voltage (Vds)
60 V
Breakdown Voltage (Drain to Source)
60.0 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
12.0 A
Rise Time
60 ns
Input Capacitance (Ciss)
500pF @25V(Vds)
Input Power (Max)
1.5 W
Fall Time
50 ns
Operating Temperature (Max)
175 ℃
Operating Temperature (Min)
-55 ℃
Power Dissipation (Max)
3.9W (Ta), 48W (Tc)

MTD3055V Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Active
Packaging
Tape & Reel (TR)
Size-Length
6.73 mm
Size-Width
6.22 mm
Size-Height
2.39 mm
Operating Temperature
-55℃ ~ 175℃

MTD3055V Documents

Fairchild
4 Pages / 0.4 MByte
Fairchild
18 Pages / 0.94 MByte
Fairchild
7 Pages / 0.87 MByte

MTD3055 Documents

Fairchild
Power Field-Effect Transistor, 12A I(D), 60V, 0.18Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
ON Semiconductor
Trans MOSFET N-CH 60V 12A 3Pin(2+Tab) DPAK
ON Semiconductor
Trans MOSFET N-CH 60V 12A 3Pin(2+Tab) DPAK T/R
Fairchild
Power Field-Effect Transistor, 12A I(D), 60V, 0.15Ω, 1Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
ON Semiconductor
DPAK N-CH 60V 12A
ON Semiconductor
IPAK N-CH 60V 12A
ON Semiconductor
Trans MOSFET N-CH 60V 12A 3Pin(2+Tab) DPAK T/R
Motorola
TMOS POWER FET 12 AMPERES 60 VOLTS RDS(on) = 0.18Ω
Motorola
TMOS power FET. 60V, 8A, Rds(on) 0.15Ω.
ON Semiconductor
DPAK N-CH 60V 12A
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