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MTD6N15T4
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MTD6N15T4 Datasheet PDF (6 Pages)
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MTD6N15T4 Specifications

TYPE
DESCRIPTION
Mounting Style
Surface Mount
Voltage Rating (DC)
150 V
Current Rating
6.00 A
Case/Package
TO-252-3
Drain to Source Resistance (on) (Rds)
300 mΩ
Polarity
N-Channel
Power Dissipation
1.25W (Ta), 20W (Tc)
Drain to Source Voltage (Vds)
150 V
Breakdown Voltage (Drain to Source)
150 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
6.00 A
Input Capacitance (Ciss)
1200pF @25V(Vds)
Power Dissipation (Max)
1.25W (Ta), 20W (Tc)

MTD6N15T4 Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tape & Reel (TR)
Operating Temperature
-65℃ ~ 150℃ (TJ)

MTD6N15T4 Documents

ON Semiconductor
6 Pages / 0.11 MByte
ON Semiconductor
19 Pages / 0.26 MByte

MTD6N15 Documents

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Power Field-Effect Transistor, 6A I(D), 150V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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