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Part Datasheet Search > MOSFETs > ON Semiconductor > MTP12P10G Datasheet PDF
MTP12P10G
$ 1.841
MTP12P10G Datasheet PDF (6 Pages)
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MTP12P10G Specifications

TYPE
DESCRIPTION
Mounting Style
Through Hole
Number of Pins
3 Pin
Voltage Rating (DC)
-100 V
Current Rating
-12.0 A
Case/Package
TO-220-3
Drain to Source Resistance (on) (Rds)
300 mΩ
Polarity
P-Channel
Power Dissipation
75W (Tc)
Input Capacitance
920 pF
Gate Charge
50.0 nC
Drain to Source Voltage (Vds)
100 V
Breakdown Voltage (Drain to Source)
100 V
Breakdown Voltage (Gate to Source)
±20.0 V
Continuous Drain Current (Ids)
12.0 A
Input Capacitance (Ciss)
920pF @25V(Vds)
Input Power (Max)
75 W
Operating Temperature (Max)
150 ℃
Operating Temperature (Min)
-65 ℃
Power Dissipation (Max)
75W (Tc)

MTP12P10G Size & Package

TYPE
DESCRIPTION
Product Lifecycle Status
Unknown
Packaging
Tube
Material
Silicon
Operating Temperature
-65℃ ~ 150℃ (TJ)

MTP12P10G Documents

ON Semiconductor
6 Pages / 0.07 MByte
ON Semiconductor
8 Pages / 0.08 MByte

MTP12P10 Documents

ON Semiconductor
Trans MOSFET P-CH Si 100V 12A 3Pin(3+Tab) TO-220AB Rail
Motorola
12A, 100V, 0.3Ω, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
New Jersey Semiconductor
Trans MOSFET P-CH 100V 12A 3Pin(3+Tab) TO-220AB Rail
ON Semiconductor
Trans MOSFET P-CH Si 100V 12A 3Pin(3+Tab) TO-220AB Rail
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