MTP50N06V Datasheet PDF - ON Semiconductor

●42 AMPERES

●60 VOLTS

●RDS(on) = 28 m

●Ω

●This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer additional safety margin against unexpected voltage transients.

●• On–resistance Area Product about One–half that of Standard MOSFETs with New Low Voltage, Low RDS(on) Technology

●• Faster Switching than E–FET Predecessors

●• Avalanche Energy Specified

●• IDSS and VDS(on) Specified at Elevated Temperature

●• Static Parameters are the Same for both TMOS V and TMOS E–FET