N25Q128A13ESE40G Datasheet PDF - Micron

●The N25Q128A13ESE40G is a first high-performance multiple input/output serial Flash Memory Device manufactured on 65nm NOR technology. It features execute-in-place (XIP) functionality, advanced write protection mechanisms and a high-speed SPI-compatible bus interface. The innovative, high-performance, dual and quad input/output instructions enable double or quadruple the transfer bandwidth for READ and PROGRAM operations.

● SPI-compatible Serial Bus Interface

● Dual/Quad I/O Instruction Provides Increased Throughput up to 432MHz

● Supported Extended SPI, Dual I/O and Quad I/O Protocols

● Execute-in-place mode for all three Protocols, Configurable Via Volatile or Non-volatile Registers

● PROGRAM/ERASE SUSPEND Operations

● Continuous read of entire memory via a single command, fast read, quad or dual output fast read

● Flexible to Fit Application, Configurable Number of Dummy Cycles, Output Buffer Configurable

● Software Reset

● 64-byte, User-lockable, One-time Programmable (OTP) Dedicated Area

● Subsector erase 4kb uniform granularity blocks, Sector erase 64kb uniform granularity blocks

● Hardware Write Protected Area Size Defined by Five Non-volatile Bits (BP0/BP1/BP2/BP3/TB)

● JEDEC-standard 2-byte Signature (BA18h)

● Unique ID Code - 17 RO Bytes, Two Extended Device ID Bytes to Identify Device Factory options

● Minimum 100,000 ERASE Cycles per Sector

● More Than 20 Years Data Retention

●Stresses greater than those listed may cause permanent damage to the device, exposure to absolute maximum rating conditions for extended periods may affect reliability.